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Modern computers contain tens of billions of switches, called transistors, that pass electrical signals to process inputs and outputs—serving as the basis for computation.
In [7] we proposed a visual programming system called Tioga. The Tioga system applies a boxes and arrows programming notation to allow nonexpert users to graphically construct database applications. U...
We demonstrate with first-principles electron transport calculations that large tunneling magnetoresistance (TMR) and tunneling electroresistance (TER) effects can coexist in an all-oxide device. The ...
Purpose: The water and electricity (etc.) supply is the main problem that big agglomerations meet, therefore the non-excavation works are developed in areas of high buildings density. Design/methodol...
This paper provides a brief overview of the young, but rapidly growing field of spintronics. Its primary objective is to explain how as electrons tunnel through simple insulators such as MgO, wavefu...
Recent developments in the application of scanning tunneling microscopy (STM) to nanofabrication and nanocharacterization are reviewed. The main focus of this paper is to outline techniques for depo...
会议信息 篇名 A new thinking of reducing powder & dust on mining & tunneling faces 语种 英文 撰写或编译 撰写 作者 Li Xiaohuo 第一作者单位 会议名称 '98 International Symposiom on Safety Science and Technology 发表日期 1998年 月 日 文章标识(I...
Using both analytic theory and first-principles finite-difference time-domain simulations, we introduce a displacement sensing mechanism using photonic crystal slabs coupled in the near-&#...
We investigate general channel drop tunneling processes using both analytic theory and first-principles simulations. These tunneling processes occur when two one-dimensional continuums are broug...
A theoretical model to evaluate the sensitivity of the tunneling current to the electric field in an n-channel MOSFET with two gates is proposed. This sensitivity is calculated in a real situation.
We present a general analysis of the tunneling process through localized resonant states between onedimensional continuums. We show that complete transfer can occur between the continuums by creating ...
The loss power density associated with the tunneling current in a typical MOS cell with a floating gate is evaluated for high electric-field strengths in the oxide layer. Furthermore, problems related...
The tunneling current density in a MOS cell for a low-voltage microcontroller based on EEPROM is calculated for high electric strengths. Furthermore, this current density is discussed in terms of the ...
Thick film resistors containing a mixture of ruthenium oxide (RuO2) and lead borosilicate (Pb5B2SiO10) have been produced on alumina [(Al2O3)·96(MgO)·04] substrates. The temperature coefficient of res...
It is proposed in this paper that the temperature coefficient of resistivity (TCR) in thick film resistors arises from (i) the usual particle-to-particle conduction, (ii) electron tunneling, and (iii)...

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