搜索结果: 1-15 共查到“光学 a-Si:H”相关记录17条 . 查询时间(0.127 秒)
中国科学院海洋所深海原位实验发现sI型天然气水合物可自然转变为sII型（图）
天然气水合物 光谱探测
2024/7/14
2024年7月14日，国际学术期刊Geophysical Research Letters报道了中国科学院海洋研究所基于自主研制的深海原位拉曼光谱探测系统开展天然气水合物原位实验的最新成果，建立了天然气水合物在海水环境影响下发生结构转化的模型，为天然气水合物在海水中的原位演化过程提供了新的视角。
Robust design of Si/Si3N4 high contrast grating mirror for mid-infrared VCSEL application
High contrast grating mirror mid-infrared VCSEL Robust design
2012/5/3
A Si/Si3N4 high contrast grating mirror has been designed for a VCSEL integration in mid-infrared ({\lambda} = 2.65 $\mu$m). The use of an optimization algorithm which maximizes a VCSEL mirror quality...
Low-loss amorphous Si waveguides with gradient refractive index cladding structure
Low-loss amorphous waveguides gradient refractive index cladding structure
2011/9/20
Amorphous Si waveguides with gradient refractive index cladding structure are proposed and fabricated using plasma-enhanced chemical vapor deposition method. Compared with 6 dB/cm for ridge waveguide ...
采用火焰喷涂及激光重熔工艺在镁合金基材表面制备了A lS i合金涂层, 考察了涂层激光重熔处理前后的组织及性能。结果表明: 激光重熔处理前, 涂层组织不够致密, 涂层硬度较低; 激光重熔后, 涂层变得组织致密、均匀,元素扩散剧烈, 界面呈冶金结合, 涂层硬度可高达270HV。激光重熔处理使涂层和基材表面层都发生熔融, 涂层厚度大幅增加。分析表明, 激光重熔后涂层的组织非常致密,...
采用射频磁控溅射法在Si（100）衬底上制备了Mg0.33Zn0.67O薄膜，研究了Mg0.33Zn0.67O薄膜的结构和光学性能。结果表明，Si（100）衬底上Mg0.33Zn0.67O薄膜呈六方纤锌矿结构，薄膜沿c方向取向生长，且c轴方向晶格增大0.03nm。薄膜呈现优异的半导体特性，激子吸收峰位于297nm，禁带宽度为4.3eV。薄膜平均粒径约为20nm。薄膜在深紫外激发下的荧光发射位于36...
水浴条件下YAG倍频、三倍频激光切割Si片比较
YAG固体倍频激光 切割 Si片 水浴
2008/1/2
对Nd∶YAG固体激光器倍频、三倍频激光输出在空气和水浴环境下刻蚀Si片进行了研究，分析了刻蚀速率和样品表面形貌，得出了在355 nm刻蚀波长下，水浴环境中，刻蚀速率最快，刻槽宽度最小，小于10 μm的实验结论，为工业应用提供参考.
研究扩散屏障层对Mo/Si多层膜软X射线反射率影响的模拟
2007/8/20
在特定波长下,用四层结构模型模拟了Mo/Si多层膜的软X射线反射率.研究了扩散屏障层dMo-on-Si和dSi-on-Mo对Mo/Si多层膜软X射线反射率的影响.研究发现,扩散屏障层并不总是损害Mo/Si多层膜的光学性能,通过合理设计dMo-on-Si和dSi-on-Mo厚度,增加dMo-on-Si与dSi-on-Mo的比值,也能提高多层膜的软X射线反射率.
Comparisons of structural and optical properties of ZnO films grown on sapphire and Si(001)
2007/7/28
期刊信息
篇名
Comparisons of structural and optical properties of ZnO films grown on sapphire and Si(001)
语种
英文
撰写或编译
作者
Qiu DJ,Wu HZ(吴惠桢),Xu XL,et al
第一作者单位
刊物名称
CHINESE PHYSICS LETTERS
页面
19 (11): 1714-17...
Si（001）衬底上生长的ZnO量子点的光学性质研究
2007/7/28
奖励信息
奖励名称
Si（001）衬底上生长的ZnO量子点的光学性质研究
完成人
吴惠桢、邱东江、蔡阳健,徐晓玲
完成单位
推荐单位
授奖机构
浙江省
授奖日期
年
月
日
奖励种类
自然科学优秀论文奖
奖励等级
三等奖
奖励编号
相关项目
ZnO晶体薄膜及其量子点结构的光学性质研究
氨化Si基Ga2O3/BN薄膜制备GaN纳米线
磁控溅射 氮化镓纳米线 光致发光
2006/7/15
利用射频磁控溅射技术在Si(111)衬底上制备Ga2O3/BN薄膜, 然后在氨气中退火合成了大量的一维GaN纳米线. X射线衍射、选区电子衍射和傅立叶红外吸收光谱的分析结果表明, 制备的GaN纳米线为六方纤锌矿结构. 利用扫描电子显微镜和高分辨透射电子显微镜观察发现, 纳米线具有十分光滑且干净的表面, 其直径为40~160 nm左右, 典型的纳米线长达几十微米. 室温下以300 nm波长的光激发样...
Electrical Characteristics of Si Doped with Sb by Laser Annealing
Laser annealing LID doping Silicon devices Sb dopants
2006/6/30
Laser induced diffusion of antimony in silicon was obtained using a Nd:YAG pulsed laser. The irradiation of antimony-coated silicon by laser beam allowed melting and diffusion of antimony inside the s...
Photoconductivity of Selenium and Sulphur Doped a-Si:H thin Films
Se S a-Si:H Photoconductivity recombination mechanism
2005/8/30
This paper presents a study of photoconductivity of S- and Se-doped a-Si:H as a function of composition and temperature. Temperature dependence of photoconductivity of the films was measured under the...
Effects of the Back Reflector on the Optical Enhancement Factor and Quantum Efficiency of a-Si:H p-i-n Solar Cells
amorphous (a-) Si:H p-i-n solar cells back reflectors light trapping quantum efficiency
2000/7/30
The effect of tin oxide (SnO2) texture and back reflector (BR) on optical enhancement factor has been extensively investigated in a series of 4 a-Si:H p-i-n solar cells. The internal quantum efficienc...
Internal Photoemission Spectroscopy for A PtSi/p-Si Schottky Junction
Photoemission Spectroscopy A PtSi/p-Si Schottky Junction
1999/7/30
Properties of internal photoemission in a PtSi-Si Schottky junction have been studied. The traditional Fowler plot of a detector's photoyield is found to be nonlinear for values close to the barrier h...
Single Si d-Doped GaAs Investigations by New Photothermal Wavelength Modulated Photocurrent Technique
Photothermal Wavelength Modulated Photocurrent
1999/3/30
New Photothermal Wavelength Modulated Photocurrent (PWMPC) technique is reported. This technique is used for investigation of the MBE grown p-GaAs sample in which a single Si-layer was embedded with a...