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The 23rd International Symposium on Room-Temperature Semiconductor Detectors (RTSD)
semiconductor radiation detectors imaging arrays
2016/7/21
The 23rd International Symposium on Room-Temperature Semiconductor Detectors (RTSD) represents the largest forum of scientists and engineers developing improved semiconductor radiation detectors and i...
UCLA and USC scientists devise breakthrough technique for mapping temperature in tiny electronic devices
UCLA and USC scientists mapping temperature tiny electronic devices
2015/2/6
Overheating is a major problem for the microprocessors that run our smartphones and computers. But a team of UCLA and USC scientists have made a breakthrough that should enable engineers to design mic...
Lithium Ion Battery Failure Detection Using Temperature Difference Between Internal Point and Surface
Lithium Ion Battery Battery Safety Battery Thermal Model TDIS Failure Early Detection Thermal Runaway
2015/1/20
Lithium-ion batteries are widely used for portable electronics due to high energy density, mature processing technology and reduced cost. However, their applications are somewhat limited by safety con...
VIRTEX 4 LX200 automated temperature stress test serial interface and test control logic design implementation
Automatic test hot chamber temperature pressure equipment temperature
2014/12/31
The overall project is to create a system that automatically tests the internal components of Xilinx Virtex 4 LX200 device, while the device is running in a thermal chamber at temperatures that stress...
The Measurement of Internal Temperature Anomalies in the Body Using Microwave Radiometry and Anatomical Information: Inference Methods and Error Models
Microwave Radiometry Temperature Anomaly Detection Medical
2014/12/8
The ability to observe temperature variations inside the human body may help in detecting the presence of medical anomalies. Abnormal changes in physiological parameters (such as metabolic and blood p...
7-Mar-2007，DENVER, CO Although it was discovered more than 20 years ago, a particular type of high-temperature (Tc) superconductor ?material that conducts electricity with almost zero resistance ?is r...
COMPARATIVE ANALYSIS OF THE BEHAVIOR OF COAXIAL AND FRONTAL COUPLINGS – WITH PERMANENT MAGNETS – IN HIGH TEMPERATURE ENVIRONMENTS
permanent magnets permanent magnet couplings
2004/1/12
This paper presents a comparative analysis of the behavior of coaxial and frontal couplings – with permanent magnets – in high temperature environments specific to iron and steel industry. The compara...
Optimisation of Temperature Fields of Microsystems with Self-Organising Neural Nets
Thermal problems Temperature fields optimisation Neural nets Microsystems Topography optimisation
2002/11/17
Thermal modelling and optimisation of parameter distributed systems is a rather time-consuming process. In this paper the problem of optimisation of temperature fields of VLSI circuits and systems is ...
Ultra-Low Temperature Coefficient of Capacitance (Tcc) of the SrSnO3-Based Electrical Components
Strontium metastannate Capacitor component Electroceramics Dielectrics Complex plane analysis
2002/11/17
The perovskite-structured SrSnO3 possessing steady capacitance over the temperature range between 27°C and 300°C in a frequency domain spanning nearly four decades has been evaluated. The samples inve...
Experimental Studies of New GaAs Metal/Insulator/p-n+ Switches Using Low Temperature Oxide
Negative differential resistance (NDR) Liquid phase chemical-enhanced oxide (LPECO)
2002/3/21
First observation of switching behavior is reported in GaAs metal-insulator-p-n+ structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with ...
THE BEHAVIOR OF ASYMMETRIC FRONTAL COUPLINGS WITH PERMANENT MAGNETS IN MAGNETIC POWDER AND HIGH TEMPERATURE ENVIRONMENTS
permanent magnets permanent magnet couplings
2002/1/12
The main purpose of this paper is the comparative analysis of the behavior of
frontal couplings with Nd-Fe-B permanent magnets in difficult environments, specific
to metallurgy–such as environments ...
Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep Submicrometer MOSFET'S
Submicrometer MOSFET’s Impact ionization Substrate current Temperature Channel length
2001/5/15
In this paper, a detailed experimental study of channel length, drain voltage and temperature dependence of substrate current Isub in submicrometer MOSFET's is presented. Impact ionization rate α is r...
New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature
MOS transistor Drain saturation voltage Substrate current
2001/3/19
A new method for drain saturation voltage extraction in submicron MOSFETs is presented. It is based on measurements of the partial derivative of the impact ionization rate. The method has been tested ...
A Study on Effect of Line Width, Composition and Firing Temperature on the Microstripline Properties
Fritless thick film paste Microstriplines Transmittance
2000/7/12
The transmittance and reflectance of microstriplines of different widths, fabricated by thick film and thin film technology are studied in the X and Ku band (8–18 GHz). The fritless thick film Ag past...
GaN based FET devices represent at present the solid state power sources of highest microwave output power. Their materials structure and technology is briefly reviewed and their mitations and problem...