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On the Sensitivity of the Tunneling Current to Electric Field in a MOSFET with Two Gates
Sensitivity tunneling current n-channel MOSFET
1999/3/9
A theoretical model to evaluate the sensitivity of the tunneling current to the electric field in an n-channel MOSFET with two gates is proposed. This sensitivity is calculated in a real situation.
A Quantitative Analysis of Tunneling Current in A MOS Cell for A Low-Voltage Microcontroller
Tunneling current EEPROM oxide thickness
1997/7/22
The tunneling current density in a MOS cell for a low-voltage microcontroller based on EEPROM is calculated for high electric strengths. Furthermore, this current density is discussed in terms of the ...