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Measurement of the Tunneling and Hopping Parameters in RuO2 Thick Films
the Tunneling and Hopping Parameters RuO2 Thick Films
1983/3/10
Thick film resistors containing a mixture of ruthenium oxide (RuO2) and lead borosilicate (Pb5B2SiO10) have been produced on alumina [(Al2O3)·96(MgO)·04] substrates. The temperature coefficient of res...
Electron Tunneling and Hopping Possibilites in RuO2 Thick Films
Electron Tunneling and Hopping Possibilites RuO2 Thick Films TCR
1982/5/26
It is proposed in this paper that the temperature coefficient of resistivity (TCR) in thick film resistors arises from (i) the usual particle-to-particle conduction, (ii) electron tunneling, and (iii)...