搜索结果: 1-10 共查到“知识库 Vertical-Cavity”相关记录10条 . 查询时间(0.046 秒)
Oxide-Relief Vertical-Cavity Surface-Emitting Lasers with Extremely High Data-Rate/Power-Dissipation Ratios
Oxide-Relief Vertical-Cavity Surface-Emitting Lasers Extremely High Data-Rate/Power-Dissipation Ratios
2011/5/21
By using oxide-relief technique, a high modulation-efficiency (9.8GHz/mA 1/2 ) and a high modulation-speed (34 Gbps) with a record-high data-rate/power-dissipation ratios (2.9 (9.2) Gbps/mW at 34 (12....
High Speed Photonic Crystal Vertical Cavity Lasers
High Speed Photonic Crystal Vertical Cavity Lasers
2011/5/21
The design, fabrication, and performance of single transverse mode high speed photonic crystal vertical cavity surface emitting lasers are reviewed. The stable index guiding from the photonic crystal ...
Chaotic Vertical-Cavity Surface-Emitting Laser for 1.4 GHz Message Transmission
Chaotic Vertical-Cavity Surface-Emitting Laser Message Transmission
2008/7/30
An experimental demonstration of GHz message encoding and decoding in unidirectionally coupled chaotic vertical-cavity surface-emitting lasers with polarisation-preserved optical injection.
An impact of a localization of an oxide aperture within a vertical-cavity surface-emitting diode laser (VCSEL) cavity on its lasing threshold
semiconductor laser vertical-cavity surface-emitting diode laser (VCSEL)
2005/3/27
In the present paper, an impact of localization of an oxide aperture within a vertical-cavity surface-emitting diode laser (VCSEL) on its threshold operation is analyzed. As expected, a shift of the a...
Simplified modelling of photonic-crystal-confined vertical-cavity surface-emitting diode lasers
photonic crystals vertical-cavity surface-emitting diode lasers (VCSELs) photonic-crystal-confined VCSELs simplified VCSEL modelling
2005/3/27
In standard GaAs-based oxide-confined vertical-cavity surface-emitting diode lasers (VCSELs), their transverse single-fundamental-mode operation is limited to relatively low outputs. It is a direct co...
Physical analysis of an operation of GaInAs/GaAs quantum-well vertical-cavity surface-emitting diode lasers emitting in the 1.3-μm wavelength range
semiconductor laser VCSEL GaInAs/GaAs QW
2005/2/26
Comprehensive three-dimensional self-consistent optical-electrical-thermal-gain physical modelling is used to simulate room-temperature continuous-wave performance characteristics of GaInAs/GaAs laser...
High-Speed Vertical-Cavity Laser Diodes at 1.55 μm
High-Speed Vertical-Cavity Laser Diodes
2004/3/21
Buried tunnel junction vertical-cavity surface-emitting lasers (BTJ-VCSELs) for 1.55 μm wavelength, 3dB-cut-off-frequencies around 8 GHz, modulation bandwidths up to 10 Gbit/s and excellent stationary...
Some expected extraordinary behaviours of nitride vertical-cavity surface-emitting lasers following from special features of nitride materials
modelling nitride VCSELs interactions between physical phenomena
2004/1/25
In spite of dramatic efforts of numerous technological centres in the world, until now room-temperature continuous-wave operation of nitride diode vertical-cavity surface-emitting lasers (VCSEL) has n...
Visible (Red)Vertical-Cavity Surface-Emitting Lasers
Vertical-Cavity Surface-Emitting Lasers
2000/4/15
Red VCSELs are ideal light sources for emerging technologies such as plastic-fiber-based communication and high-density optical storage systems. However, less favourable materials properties make desi...
A GaInAsP/InP Vertical Cavity Surface Emitting Laser for 1.5 m m operation
distributed Bragg reflector vertical cavity surface emitting laser
1999/3/30
We present the results of our studies concerning the pulsed operation of a bulk GaInAsP/InP vertical cavity surface emitting laser (VCSEL). The device is tailored to emit at around 1.5 m m at room tem...